BC373RL1
- Mfr.Part #
- BC373RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 25,954
- In Stock :
- 25,954
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- 240
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- HTS Code :
- 8541.21.00.75
- Polarity :
- NPN
- Max Power Dissipation :
- 625mW
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Published :
- 2007
- Current Rating :
- 1A
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 8000
- Max Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 1.1V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 80V
- JESD-609 Code :
- e0
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Additional Feature :
- EUROPEAN PART NUMBER
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 12V
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- BC373
- Datasheets
- BC373RL1

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC373RL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1.1V @ 250μA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 200MHz.A maximum collector current of 1A volts can be achieved.
BC373RL1 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373RL1 Applications
There are a lot of ON Semiconductor
BC373RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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