BC373ZL1
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- Mfr.Part #
- BC373ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 9,789
- In Stock ：
- 9,789
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 625mW
- Frequency - Transition :
- 200MHz
- Polarity :
- NPN
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 625mW
- Published :
- 2006
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 80V
- Collector Emitter Saturation Voltage :
- 1.1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- hFE Min :
- 8000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BC373
- Current Rating :
- 1A
- Additional Feature :
- EUROPEAN PART NUMBER
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 1A
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 12V
- ECCN Code :
- EAR99
- Datasheets
- BC373ZL1
BC373ZL1 Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC373ZL1G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC373ZL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373ZL1G Applications
There are a lot of ON Semiconductor
BC373ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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