BC372
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- Mfr.Part #
- BC372
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 1A TO92
- Stock
- 43,824
- In Stock ：
- 43,824
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2006
- Continuous Collector Current :
- 1A
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Saturation Voltage :
- 1.1V
- Emitter Base Voltage (VEBO) :
- 12V
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Current Rating :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Voltage - Rated DC :
- 100V
- Transition Frequency :
- 200MHz
- Polarity :
- NPN
- Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- hFE Min :
- 8000
- Max Collector Current :
- 1A
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Frequency - Transition :
- 200MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 3
- Number of Pins :
- 3
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 240
- Datasheets
- BC372
BC372 Documents
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC372 Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 250μA, 250mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 1A volts.
BC372 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC372 Applications
There are a lot of ON Semiconductor
BC372 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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