BC372

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Mount :

Through Hole

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

1A

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e0

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Transition Frequency :

200MHz

Packaging :

Bulk

Emitter Base Voltage (VEBO) :

12V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Reach Compliance Code :

not_compliant

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

100V

Max Power Dissipation :

625mW

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

Continuous Collector Current :

1A

Power Dissipation :

625mW

Frequency - Transition :

200MHz

Pin Count :

3

Current Rating :

1A

Collector Emitter Voltage (VCEO) :

100V

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 250μA, 250mA

Number of Pins :

3

Polarity :

NPN

Transistor Type :

NPN - Darlington

ECCN Code :

EAR99

Number of Elements :

1

hFE Min :

8000

Lead Free :

Contains Lead

Collector Base Voltage (VCBO) :

100V

Published :

2006

Peak Reflow Temperature (Cel) :

240

Collector Emitter Saturation Voltage :

1.1V