BC373G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Frequency - Transition :

200MHz

Collector Emitter Voltage (VCEO) :

80V

Transistor Application :

AMPLIFIER

Power Dissipation :

625mW

Number of Terminations :

3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

1A

Base Part Number :

BC373

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1.1V

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Number of Pins :

3

Continuous Collector Current :

1A

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 250μA, 250mA

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

80V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

12V

JESD-609 Code :

e1

Max Power Dissipation :

625mW

Voltage - Rated DC :

80V

Transistor Type :

NPN - Darlington

Pin Count :

3

Max Collector Current :

1A

ECCN Code :

EAR99

Polarity :

NPN

Collector Emitter Breakdown Voltage :

80V

hFE Min :

8000

RoHS Status :

RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type :

Through Hole

Transition Frequency :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)