APTM50UM13SAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

42ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Number of Elements :

1

Pin Count :

2

Avalanche Energy Rating (Eas) :

3000 mJ

Rds On (Max) @ Id, Vgs :

15m Ω @ 167.5A, 10V

Published :

1999

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

UPPER

ECCN Code :

EAR99

Packaging :

Bulk

Package / Case :

SP6

Continuous Drain Current (ID) :

335A

Factory Lead Time :

36 Weeks

Vgs(th) (Max) @ Id :

5V @ 20mA

Input Capacitance (Ciss) (Max) @ Vds :

42200pF @ 25V

Radiation Hardening :

No

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Fall Time (Typ) :

100 ns

Power Dissipation-Max :

3290W Tc

Terminal Finish :

TIN SILVER COPPER

Turn-Off Delay Time :

96 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

335A Tc

Gate Charge (Qg) (Max) @ Vgs :

800nC @ 10V

Number of Pins :

6

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Chassis Mount, Screw

FET Type :

N-Channel

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PUFM-X2

Turn On Delay Time :

21 ns

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED