APTM50UM09FAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500V

Avalanche Energy Rating (Eas) :

3000 mJ

Radiation Hardening :

No

ECCN Code :

EAR99

Continuous Drain Current (ID) :

497A

Mount :

Chassis Mount, Screw

JESD-30 Code :

R-PUFM-X2

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Number of Elements :

1

Pin Count :

2

Gate Charge (Qg) (Max) @ Vgs :

1200nC @ 10V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Power Dissipation-Max :

5000W Tc

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

63300pF @ 25V

Fall Time (Typ) :

100 ns

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

21 ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

497A Tc

Rds On (Max) @ Id, Vgs :

10m Ω @ 248.5A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 30mA

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Rise Time :

42ns

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

96 ns

Published :

2006

FET Type :

N-Channel

Factory Lead Time :

36 Weeks

Package / Case :

SP6

Power Dissipation :

5kW

Configuration :

SINGLE WITH BUILT-IN DIODE