APTM50SKM38TG
- Mfr.Part #
- APTM50SKM38TG
- Manufacturer
- Microsemi
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 90A SP4
- Stock
- 3,419
- In Stock :
- 3,419
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Case Connection :
- Isolated
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Published :
- 2016
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- SP4
- Input Capacitance (Ciss) (Max) @ Vds :
- 11200pF @ 25V
- Pin Count :
- 12
- DS Breakdown Voltage-Min :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Chassis Mount
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 12
- Power Dissipation-Max :
- 694W Tc
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 45A, 10V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Operating Temperature :
- -40°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 246nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 360A
- Mount :
- Chassis Mount, Screw
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 90A
- Transistor Application :
- SWITCHING
- Terminal Finish :
- TIN SILVER COPPER
- Power Dissipation :
- 694W
- Terminal Form :
- UNSPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Datasheets
- APTM50SKM38TG
N-Channel Bulk 45m Ω @ 45A, 10V ±30V 11200pF @ 25V 246nC @ 10V 500V SP4
APTM50SKM38TG Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 11200pF @ 25V.This device has a continuous drain current (ID) of [90A], which is its maximum continuous current.A maximum pulsed drain current of 360A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APTM50SKM38TG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 500V drain to source voltage (Vdss)
APTM50SKM38TG Applications
There are a lot of Microsemi Corporation
APTM50SKM38TG applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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