APTM50SKM38TG

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Mfr.Part #
APTM50SKM38TG
Manufacturer
Microsemi
Package / Case
SP4
Datasheet
Download
Description
MOSFET N-CH 500V 90A SP4
Stock
3,419
In Stock :
3,419

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
4
Case Connection :
Isolated
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Bulk
Published :
2016
Terminal Position :
UPPER
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
SP4
Input Capacitance (Ciss) (Max) @ Vds :
11200pF @ 25V
Pin Count :
12
DS Breakdown Voltage-Min :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Mounting Type :
Chassis Mount
Reach Compliance Code :
Unknown
Number of Terminations :
12
Power Dissipation-Max :
694W Tc
Number of Elements :
1
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
45m Ω @ 45A, 10V
Avalanche Energy Rating (Eas) :
2500 mJ
Drain to Source Voltage (Vdss) :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
90A Tc
JESD-609 Code :
e1
Configuration :
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Operating Temperature :
-40°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
246nC @ 10V
Pulsed Drain Current-Max (IDM) :
360A
Mount :
Chassis Mount, Screw
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
90A
Transistor Application :
SWITCHING
Terminal Finish :
TIN SILVER COPPER
Power Dissipation :
694W
Terminal Form :
UNSPECIFIED
Vgs(th) (Max) @ Id :
5V @ 5mA
Gate to Source Voltage (Vgs) :
30V
Transistor Element Material :
SILICON
Datasheets
APTM50SKM38TG
Introducing Transistors - FETs, MOSFETs - Single Microsemi APTM50SKM38TG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:SP4, Mounting Type:Chassis Mount, Number of Terminations:12, Operating Temperature:-40°C~150°C TJ, APTM50SKM38TG pinout, APTM50SKM38TG datasheet PDF, APTM50SKM38TG amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi APTM50SKM38TG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 45m Ω @ 45A, 10V ±30V 11200pF @ 25V 246nC @ 10V 500V SP4

APTM50SKM38TG Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 11200pF @ 25V.This device has a continuous drain current (ID) of [90A], which is its maximum continuous current.A maximum pulsed drain current of 360A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

APTM50SKM38TG Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 500V drain to source voltage (Vdss)


APTM50SKM38TG Applications


There are a lot of Microsemi Corporation
APTM50SKM38TG applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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