APTM50SKM35TG
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- Mfr.Part #
- APTM50SKM35TG
- Manufacturer
- Microsemi
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 99A SP4
- Stock
- 37,543
- In Stock ：
- 37,543
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 12
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 99A Tc
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 49.5A, 10V
- Drain-source On Resistance-Max :
- 0.039Ohm
- Case Connection :
- Isolated
- Operating Temperature :
- -40°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 14000pF @ 25V
- Packaging :
- Bulk
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 500V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 99A
- Reach Compliance Code :
- Unknown
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- UNSPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Mounting Type :
- Chassis Mount
- Package / Case :
- SP4
- Power Dissipation-Max :
- 781W Tc
- Pin Count :
- 12
- Terminal Finish :
- TIN SILVER COPPER
- Number of Elements :
- 1
- Terminal Position :
- UPPER
- Number of Pins :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Published :
- 2016
- Power Dissipation :
- 781W
- Mount :
- Chassis Mount, Screw
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 396A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- APTM50SKM35TG
N-Channel Bulk 39m Ω @ 49.5A, 10V ±30V 14000pF @ 25V 280nC @ 10V 500V SP4
APTM50SKM35TG Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 99A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 396A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APTM50SKM35TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 99A
based on its rated peak drain current 396A.
a 500V drain to source voltage (Vdss)
APTM50SKM35TG Applications
There are a lot of Microsemi Corporation
APTM50SKM35TG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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