APTM50SKM19G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

UPPER

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0225Ohm

Terminal Finish :

TIN SILVER COPPER

Power Dissipation-Max :

1136W Tc

DS Breakdown Voltage-Min :

500V

FET Type :

N-Channel

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

163A Tc

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 81.5A, 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2500 mJ

Vgs(th) (Max) @ Id :

5V @ 10mA

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

18 ns

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

492nC @ 10V

Mounting Type :

Chassis Mount

Package / Case :

SP6

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

36 Weeks

Terminal Form :

UNSPECIFIED

Rise Time :

35ns

JESD-30 Code :

R-XUFM-X5

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Pin Count :

5

Turn-Off Delay Time :

87 ns

Input Capacitance (Ciss) (Max) @ Vds :

22400pF @ 25V

Number of Pins :

6

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Published :

2012

ECCN Code :

EAR99

Continuous Drain Current (ID) :

163A

Fall Time (Typ) :

77 ns