APTM50SKM17G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

3000 mJ

Turn-Off Delay Time :

75 ns

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Power Dissipation :

1.25kW

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Package / Case :

SP6

Drain-source On Resistance-Max :

0.02Ohm

Factory Lead Time :

36 Weeks

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

500V

Turn On Delay Time :

21 ns

Continuous Drain Current (ID) :

180A

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 10mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

5

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

720A

Vgs (Max) :

±30V

Power Dissipation-Max :

1250W Tc

Rds On (Max) @ Id, Vgs :

20m Ω @ 90A, 10V

Terminal Position :

UPPER

Rise Time :

38ns

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

6

Radiation Hardening :

No

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

500V

Published :

2012

JESD-30 Code :

R-XUFM-X5

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Fall Time (Typ) :

93 ns

Case Connection :

Isolated

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1