APTM50DAM38TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±30V

Power Dissipation-Max :

694W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Published :

2016

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

2500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Pin Count :

12

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

90A

Drain to Source Voltage (Vdss) :

500V

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5V @ 5mA

Package / Case :

SP4

DS Breakdown Voltage-Min :

500V

Power Dissipation :

694W

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

360A

Terminal Position :

UPPER

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

12

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V