APTM50DAM38CTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Pin Count :

12

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Power Dissipation :

694W

Current - Continuous Drain (Id) @ 25°C :

90A Tc

FET Type :

N-Channel

Package / Case :

SP4

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Terminal Finish :

TIN SILVER COPPER

Pulsed Drain Current-Max (IDM) :

360A

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

694W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

4

Case Connection :

Isolated

Packaging :

Bulk

Continuous Drain Current (ID) :

90A

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Published :

1997

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 5mA

Number of Terminations :

12

Avalanche Energy Rating (Eas) :

2500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V