APTM50DAM38CTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Power Dissipation-Max :

694W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Terminal Finish :

TIN SILVER COPPER

Gate to Source Voltage (Vgs) :

30V

Package / Case :

SP4

Pin Count :

12

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

2500 mJ

DS Breakdown Voltage-Min :

500V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Terminal Position :

UPPER

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

694W

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Reach Compliance Code :

Unknown

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

4

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 5mA

Continuous Drain Current (ID) :

90A

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

360A

JESD-609 Code :

e1

Number of Elements :

1

Number of Terminations :

12