APTM50DAM35TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

500V

Terminal Position :

UPPER

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Number of Pins :

4

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

99A Tc

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

396A

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

1

Drain-source On Resistance-Max :

0.039Ohm

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Power Dissipation :

781W

Pin Count :

12

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 5mA

Number of Terminations :

12

Power Dissipation-Max :

781W Tc

Mount :

Chassis Mount, Screw

Package / Case :

SP4

Transistor Element Material :

SILICON

Packaging :

Bulk

Qualification Status :

Not Qualified

Terminal Form :

UNSPECIFIED

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

99A

DS Breakdown Voltage-Min :

500V

Case Connection :

Isolated