APTM50DAM35TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 5mA

Terminal Finish :

TIN SILVER COPPER

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

3000 mJ

Drain-source On Resistance-Max :

0.039Ohm

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Package / Case :

SP4

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Number of Pins :

4

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

781W

Number of Terminations :

12

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Vgs (Max) :

±30V

Power Dissipation-Max :

781W Tc

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Continuous Drain Current (ID) :

99A

Transistor Application :

SWITCHING

Pin Count :

12

Case Connection :

Isolated

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

Pulsed Drain Current-Max (IDM) :

396A

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

99A Tc

Published :

2016

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED