APTM50DAM17G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

JESD-30 Code :

R-XUFM-X5

Terminal Position :

UPPER

Continuous Drain Current (ID) :

180A

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Package / Case :

SP6

JESD-609 Code :

e1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

75 ns

Power Dissipation-Max :

1250W Tc

Number of Pins :

6

ECCN Code :

EAR99

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

20m Ω @ 90A, 10V

Pin Count :

5

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Power Dissipation :

1.25kW

Case Connection :

Isolated

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Terminal Form :

UNSPECIFIED

Rise Time :

38ns

Transistor Element Material :

SILICON

Fall Time (Typ) :

93 ns

Turn On Delay Time :

21 ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 10mA

Terminal Finish :

TIN SILVER COPPER

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

FET Type :

N-Channel

Vgs (Max) :

±30V

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Bulk

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

720A