APTM20UM09SG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Chassis Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Terminations :

4

Terminal Finish :

TIN SILVER COPPER

Pulsed Drain Current-Max (IDM) :

780A

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Drain-source On Resistance-Max :

0.009Ohm

FET Type :

N-Channel

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

780W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

J3 Module

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XUFM-X4

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 74.5A, 10V

Mount :

Chassis Mount

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1300 mJ

Input Capacitance (Ciss) (Max) @ Vds :

12300pF @ 25V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Published :

2004

JESD-609 Code :

e1

Continuous Drain Current (ID) :

195A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

217nC @ 10V

Operating Mode :

ENHANCEMENT MODE