APTM20UM09SG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

12300pF @ 25V

Number of Elements :

1

Vgs (Max) :

±30V

Published :

2004

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

1300 mJ

Mount :

Chassis Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.009Ohm

Pulsed Drain Current-Max (IDM) :

780A

Drain to Source Voltage (Vdss) :

200V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 4mA

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

217nC @ 10V

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

9m Ω @ 74.5A, 10V

Mounting Type :

Chassis Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Power Dissipation-Max :

780W Tc

JESD-30 Code :

R-XUFM-X4

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Form :

UNSPECIFIED

Number of Terminations :

4

Terminal Position :

UPPER

Package / Case :

J3 Module

Continuous Drain Current (ID) :

195A