APTM20UM05SG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

200V

Current - Continuous Drain (Id) @ 25°C :

317A Tc

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

2500 mJ

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Power Dissipation-Max :

1136W Tc

Transistor Element Material :

SILICON

Number of Terminations :

4

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 10mA

Pulsed Drain Current-Max (IDM) :

1268A

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

5m Ω @ 158.5A, 10V

Terminal Form :

UNSPECIFIED

Drain-source On Resistance-Max :

0.005ohm

Published :

2004

Mounting Type :

Chassis Mount

JESD-30 Code :

R-XUFM-X4

Continuous Drain Current (ID) :

317A

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

448nC @ 10V

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Package / Case :

J3 Module

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Number of Elements :

1

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

27400pF @ 25V