APTM20UM04SAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Fall Time (Typ) :

116 ns

Pin Count :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

200V

Current - Continuous Drain (Id) @ 25°C :

417A Tc

Power Dissipation :

1.56kW

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5m Ω @ 208.5A, 10V

Turn On Delay Time :

32 ns

Turn-Off Delay Time :

88 ns

JESD-609 Code :

e1

Radiation Hardening :

No

Factory Lead Time :

36 Weeks

Continuous Drain Current (ID) :

417A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.005ohm

Package / Case :

SP6

Terminal Position :

UPPER

Vgs (Max) :

±30V

Number of Pins :

6

JESD-30 Code :

R-PUFM-X2

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

200V

Mount :

Chassis Mount, Screw

Rise Time :

64ns

Power Dissipation-Max :

1560W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

3000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

28800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 10mA

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Published :

1999

Number of Terminations :

2