APTM20UM03FAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

116 ns

Gate Charge (Qg) (Max) @ Vgs :

840nC @ 10V

Turn-Off Delay Time :

88 ns

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 290A, 10V

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Series :

POWER MOS 7®

Radiation Hardening :

No

Vgs (Max) :

±30V

Package / Case :

SP6

Vgs(th) (Max) @ Id :

5V @ 15mA

Factory Lead Time :

36 Weeks

DS Breakdown Voltage-Min :

200V

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Pbfree Code :

yes

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Turn On Delay Time :

32 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

580A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

JESD-30 Code :

R-PUFM-X2

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

3000 mJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

580A Tc

Pin Count :

2

Number of Elements :

1

Terminal Position :

UPPER

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

43300pF @ 25V

FET Type :

N-Channel

Number of Terminations :

2

Rise Time :

64ns

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

2320A

Power Dissipation-Max :

2270W Tc

Power Dissipation :

2.27kW

Number of Pins :

6