APTM20SKM05G
- Mfr.Part #
- APTM20SKM05G
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 317A SP6
- Stock
- 25,457
- In Stock :
- 25,457
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- TIN SILVER COPPER
- Radiation Hardening :
- No
- Published :
- 2006
- Mount :
- Chassis Mount, Screw
- FET Type :
- N-Channel
- Number of Pins :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Bulk
- Pin Count :
- 5
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-XUFM-X5
- Current - Continuous Drain (Id) @ 25°C :
- 317A Tc
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 200V
- Turn On Delay Time :
- 28 ns
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs :
- 448nC @ 10V
- DS Breakdown Voltage-Min :
- 200V
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 5
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- UPPER
- Turn-Off Delay Time :
- 81 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 99 ns
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 1136W Tc
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 158.5A, 10V
- Vgs (Max) :
- ±30V
- Package / Case :
- SP6
- Factory Lead Time :
- 22 Weeks
- Mounting Type :
- Chassis Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 27400pF @ 25V
- Continuous Drain Current (ID) :
- 317A
- Terminal Form :
- UNSPECIFIED
- Operating Temperature :
- -40°C~150°C TJ
- Rise Time :
- 56ns
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- APTM20SKM05G
N-Channel Bulk 6m Ω @ 158.5A, 10V ±30V 27400pF @ 25V 448nC @ 10V 200V SP6
APTM20SKM05G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 27400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 81 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 28 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APTM20SKM05G Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 317A
the turn-off delay time is 81 ns
a 200V drain to source voltage (Vdss)
APTM20SKM05G Applications
There are a lot of Microsemi Corporation
APTM20SKM05G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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