APTM20SKM05G

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Mfr.Part #
APTM20SKM05G
Manufacturer
Microsemi
Package / Case
SP6
Datasheet
Download
Description
MOSFET N-CH 200V 317A SP6
Stock
25,457
In Stock :
25,457

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
TIN SILVER COPPER
Radiation Hardening :
No
Published :
2006
Mount :
Chassis Mount, Screw
FET Type :
N-Channel
Number of Pins :
6
Operating Mode :
ENHANCEMENT MODE
Packaging :
Bulk
Pin Count :
5
Case Connection :
Isolated
Gate to Source Voltage (Vgs) :
30V
JESD-30 Code :
R-XUFM-X5
Current - Continuous Drain (Id) @ 25°C :
317A Tc
JESD-609 Code :
e1
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
200V
Turn On Delay Time :
28 ns
Vgs(th) (Max) @ Id :
5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs :
448nC @ 10V
DS Breakdown Voltage-Min :
200V
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
5
RoHS Status :
RoHS Compliant
Terminal Position :
UPPER
Turn-Off Delay Time :
81 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
99 ns
Pbfree Code :
yes
Power Dissipation-Max :
1136W Tc
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
6m Ω @ 158.5A, 10V
Vgs (Max) :
±30V
Package / Case :
SP6
Factory Lead Time :
22 Weeks
Mounting Type :
Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds :
27400pF @ 25V
Continuous Drain Current (ID) :
317A
Terminal Form :
UNSPECIFIED
Operating Temperature :
-40°C~150°C TJ
Rise Time :
56ns
Avalanche Energy Rating (Eas) :
2500 mJ
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Datasheets
APTM20SKM05G
Introducing Transistors - FETs, MOSFETs - Single Microsemi APTM20SKM05G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Number of Terminations:5, Package / Case:SP6, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, APTM20SKM05G pinout, APTM20SKM05G datasheet PDF, APTM20SKM05G amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi APTM20SKM05G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 6m Ω @ 158.5A, 10V ±30V 27400pF @ 25V 448nC @ 10V 200V SP6

APTM20SKM05G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 27400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 81 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 28 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

APTM20SKM05G Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 317A
the turn-off delay time is 81 ns
a 200V drain to source voltage (Vdss)


APTM20SKM05G Applications


There are a lot of Microsemi Corporation
APTM20SKM05G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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