APTM20SKM04G
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- Mfr.Part #
- APTM20SKM04G
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 372A SP6
- Stock
- 45,294
- In Stock ：
- 45,294
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 116 ns
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 5
- Package / Case :
- SP6
- Input Capacitance (Ciss) (Max) @ Vds :
- 28900pF @ 25V
- Number of Terminations :
- 5
- Packaging :
- Bulk
- Terminal Finish :
- TIN SILVER COPPER
- Current - Continuous Drain (Id) @ 25°C :
- 372A Tc
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Turn On Delay Time :
- 32 ns
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-XUFM-X5
- Power Dissipation :
- 1.25kW
- Operating Temperature :
- -40°C~150°C TJ
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 372A
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 186A, 10V
- Factory Lead Time :
- 36 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 88 ns
- DS Breakdown Voltage-Min :
- 200V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 560nC @ 10V
- Number of Pins :
- 6
- Power Dissipation-Max :
- 1250W Tc
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount, Screw
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.005ohm
- Pbfree Code :
- yes
- Rise Time :
- 64ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Radiation Hardening :
- No
- Datasheets
- APTM20SKM04G
N-Channel Bulk 5m Ω @ 186A, 10V ±30V 28900pF @ 25V 560nC @ 10V 200V SP6
APTM20SKM04G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 28900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APTM20SKM04G Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 372A
the turn-off delay time is 88 ns
a 200V drain to source voltage (Vdss)
APTM20SKM04G Applications
There are a lot of Microsemi Corporation
APTM20SKM04G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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