APTM20DAM10TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP4

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Case Connection :

Isolated

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

JESD-609 Code :

e1

Number of Terminations :

12

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

175A Tc

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

4

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

700A

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5V @ 5mA

FET Type :

N-Channel

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

175A

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

694W

Packaging :

Bulk

Power Dissipation-Max :

694W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

DS Breakdown Voltage-Min :

200V