APTM20DAM10TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

694W

Published :

2016

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount, Screw

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Number of Pins :

4

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

200V

Continuous Drain Current (ID) :

175A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

175A Tc

Vgs (Max) :

±30V

FET Type :

N-Channel

ECCN Code :

EAR99

Package / Case :

SP4

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Power Dissipation-Max :

694W Tc

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 5mA

Transistor Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

700A

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

RoHS Status :

RoHS Compliant

Pin Count :

12

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Number of Elements :

1

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2500 mJ