APTM20DAM05G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount, Screw

Gate Charge (Qg) (Max) @ Vgs :

448nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

SP6

Terminal Finish :

TIN SILVER COPPER

Power Dissipation-Max :

1136W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

200V

Factory Lead Time :

36 Weeks

Rds On (Max) @ Id, Vgs :

6m Ω @ 158.5A, 10V

Case Connection :

Isolated

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

200V

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

5

Turn On Delay Time :

28 ns

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

27400pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 10mA

Continuous Drain Current (ID) :

317A

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X5

Rise Time :

56ns

Current - Continuous Drain (Id) @ 25°C :

317A Tc

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

81 ns

Terminal Position :

UPPER

Radiation Hardening :

No

JESD-609 Code :

e1

Number of Pins :

6

ECCN Code :

EAR99

Fall Time (Typ) :

99 ns

Packaging :

Bulk

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2500 mJ