APTM20DAM05G
- Mfr.Part #
- APTM20DAM05G
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 317A SP6
- Stock
- 10,976
- In Stock :
- 10,976
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Package / Case :
- SP6
- JESD-30 Code :
- R-XUFM-X5
- Rise Time :
- 56ns
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 448nC @ 10V
- Packaging :
- Bulk
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- ECCN Code :
- EAR99
- Mount :
- Chassis Mount, Screw
- Turn On Delay Time :
- 28 ns
- Terminal Finish :
- TIN SILVER COPPER
- Turn-Off Delay Time :
- 81 ns
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Position :
- UPPER
- Input Capacitance (Ciss) (Max) @ Vds :
- 27400pF @ 25V
- DS Breakdown Voltage-Min :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 99 ns
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Pin Count :
- 5
- Continuous Drain Current (ID) :
- 317A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 158.5A, 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Power Dissipation-Max :
- 1136W Tc
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 6
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Factory Lead Time :
- 36 Weeks
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 317A Tc
- Datasheets
- APTM20DAM05G

N-Channel Bulk 6m Ω @ 158.5A, 10V ±30V 27400pF @ 25V 448nC @ 10V 200V SP6
APTM20DAM05G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 27400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 317A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 81 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 28 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
APTM20DAM05G Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 317A
the turn-off delay time is 81 ns
a 200V drain to source voltage (Vdss)
APTM20DAM05G Applications
There are a lot of Microsemi Corporation
APTM20DAM05G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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