APTM20DAM04G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Package / Case :

SP6

Mount :

Chassis Mount, Screw

Turn On Delay Time :

32 ns

JESD-609 Code :

e1

Power Dissipation :

1.25kW

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.005ohm

Packaging :

Bulk

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

372A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Pin Count :

5

Fall Time (Typ) :

116 ns

Number of Terminations :

5

Number of Elements :

1

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

36 Weeks

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

372A

JESD-30 Code :

R-XUFM-X5

Number of Pins :

6

Avalanche Energy Rating (Eas) :

3000 mJ

Published :

2012

Terminal Form :

UNSPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

28900pF @ 25V

Vgs (Max) :

±30V

Power Dissipation-Max :

1250W Tc

Rise Time :

64ns

Turn-Off Delay Time :

88 ns

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

5m Ω @ 186A, 10V

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V