APTM120UM70DAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Package / Case :

SP6

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

80m Ω @ 85.5A, 10V

Rise Time :

17ns

Pin Count :

2

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

5000W Tc

Factory Lead Time :

36 Weeks

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

62 ns

Number of Terminations :

2

Number of Elements :

1

Avalanche Energy Rating (Eas) :

3200 mJ

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

171A Tc

Drain-source On Resistance-Max :

0.08Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Transistor Element Material :

SILICON

Turn-Off Delay Time :

245 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

5kW

Drain to Source Voltage (Vdss) :

1200V

Terminal Finish :

TIN SILVER COPPER

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

1650nC @ 10V

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

171A

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

43500pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1999

JESD-30 Code :

R-PUFM-X2

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 30mA

Terminal Position :

UPPER

Packaging :

Bulk

Vgs (Max) :

±30V