APTM120U10SCAVG
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- Mfr.Part #
- APTM120U10SCAVG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 116A SP6
- Stock
- 33,526
- In Stock ：
- 33,526
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Chassis Mount, Screw
- Power Dissipation-Max :
- 3290W Tc
- Operating Temperature :
- -40°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- Pin Count :
- 5
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 62 ns
- Transistor Application :
- SWITCHING
- Rise Time :
- 17ns
- Turn-Off Delay Time :
- 245 ns
- Series :
- POWER MOS 7®
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 6
- FET Type :
- N-Channel
- Package / Case :
- SP6
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Current - Continuous Drain (Id) @ 25°C :
- 116A Tc
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 20mA
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 58A, 10V
- Turn On Delay Time :
- 20 ns
- Published :
- 1997
- Mounting Type :
- Chassis Mount
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 22 Weeks
- Drain to Source Voltage (Vdss) :
- 1200V
- JESD-30 Code :
- R-XUFM-X5
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 116A
- Gate Charge (Qg) (Max) @ Vgs :
- 1100nC @ 10V
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 28900pF @ 25V
- Datasheets
- APTM120U10SCAVG
N-Channel Bulk 120m Ω @ 58A, 10V ±30V 28900pF @ 25V 1100nC @ 10V 1200V SP6
APTM120U10SCAVG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.A device's maximum input capacitance is 28900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 116A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 245 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM120U10SCAVG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 116A
the turn-off delay time is 245 ns
a 1200V drain to source voltage (Vdss)
APTM120U10SCAVG Applications
There are a lot of Microsemi Corporation
APTM120U10SCAVG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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