APTM120U10SAG

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Mfr.Part #
APTM120U10SAG
Manufacturer
Microchip Technology
Package / Case
SP6
Datasheet
Download
Description
MOSFET N-CH 1200V 116A SP6
Stock
23,409
In Stock :
23,409

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Turn On Delay Time :
20 ns
Input Capacitance (Ciss) (Max) @ Vds :
28900pF @ 25V
Transistor Application :
SWITCHING
Fall Time (Typ) :
62 ns
Terminal Finish :
TIN SILVER COPPER
JESD-609 Code :
e1
Turn-Off Delay Time :
245 ns
Gate to Source Voltage (Vgs) :
30V
Radiation Hardening :
No
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
116A Tc
Number of Elements :
1
Rise Time :
17ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5V @ 20mA
Terminal Form :
UNSPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package / Case :
SP6
Continuous Drain Current (ID) :
116A
Rds On (Max) @ Id, Vgs :
120m Ω @ 58A, 10V
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
3290W Tc
Terminal Position :
UPPER
Packaging :
Bulk
Factory Lead Time :
36 Weeks
Drain to Source Voltage (Vdss) :
1200V
Gate Charge (Qg) (Max) @ Vgs :
1100nC @ 10V
Case Connection :
Isolated
Mount :
Chassis Mount, Screw
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
3200 mJ
Pin Count :
4
JESD-30 Code :
R-XUFM-X4
Number of Pins :
6
Number of Terminations :
4
Mounting Type :
Chassis Mount
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Published :
1999
Vgs (Max) :
±30V
Operating Temperature :
-40°C~150°C TJ
Datasheets
APTM120U10SAG
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology APTM120U10SAG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SP6, Number of Pins:6, Number of Terminations:4, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, APTM120U10SAG pinout, APTM120U10SAG datasheet PDF, APTM120U10SAG amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology APTM120U10SAG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology APTM120U10SAG


N-Channel Bulk 120m Ω @ 58A, 10V ±30V 28900pF @ 25V 1100nC @ 10V 1200V SP6

APTM120U10SAG Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3200 mJ.A device's maximal input capacitance is 28900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 116A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 245 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

APTM120U10SAG Features


the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 116A
the turn-off delay time is 245 ns
a 1200V drain to source voltage (Vdss)


APTM120U10SAG Applications


There are a lot of Microsemi Corporation
APTM120U10SAG applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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