APTM120SK15G
- Mfr.Part #
- APTM120SK15G
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 60A SP6
- Stock
- 17,678
- In Stock :
- 17,678
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-XUFM-X5
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- 60A
- Vgs (Max) :
- ±30V
- Published :
- 2016
- Power Dissipation-Max :
- 1250W Tc
- Mounting Type :
- Chassis Mount
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- SP6
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Pin Count :
- 5
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Packaging :
- Bulk
- Power Dissipation :
- 1.25kW
- Drain to Source Voltage (Vdss) :
- 1200V
- Mount :
- Chassis Mount, Screw
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 240A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Finish :
- TIN SILVER COPPER
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 20600pF @ 25V
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Form :
- UNSPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 748nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Terminal Position :
- UPPER
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 5
- Datasheets
- APTM120SK15G
N-Channel Bulk 175m Ω @ 30A, 10V ±30V 20600pF @ 25V 748nC @ 10V 1200V SP6
APTM120SK15G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 20600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM120SK15G Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 60A
based on its rated peak drain current 240A.
a 1200V drain to source voltage (Vdss)
APTM120SK15G Applications
There are a lot of Microsemi Corporation
APTM120SK15G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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