APTM120DA68T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

816m Ω @ 12A, 10V

Number of Terminations :

12

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

SP1

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

1

JESD-609 Code :

e1

Reach Compliance Code :

Unknown

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1200V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

6696pF @ 25V

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Power Dissipation :

357W

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Pin Count :

12

Mounting Type :

Chassis Mount

FET Type :

N-Channel

Power Dissipation-Max :

357W Tc

Terminal Finish :

TIN SILVER COPPER

Pulsed Drain Current-Max (IDM) :

90A

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

15A

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V