APTM120DA56T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

48 ns

Turn-Off Delay Time :

170 ns

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Turn On Delay Time :

50 ns

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Vgs (Max) :

±30V

Pin Count :

12

Pbfree Code :

yes

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.672Ohm

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Chassis Mount, Screw

Rds On (Max) @ Id, Vgs :

672m Ω @ 14A, 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Elements :

1

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Power Dissipation :

390W

Continuous Drain Current (ID) :

18A

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

7736pF @ 25V

Number of Terminations :

12

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Rise Time :

31ns

Package / Case :

SP1

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

390W Tc

Drain to Source Voltage (Vdss) :

1200V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Published :

2016

Number of Pins :

1