APTM120DA30T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Power Dissipation :

657W

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Rise Time :

60ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Factory Lead Time :

36 Weeks

Number of Pins :

1

Turn On Delay Time :

100 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Pin Count :

12

Continuous Drain Current (ID) :

31A

Terminal Position :

UPPER

Pbfree Code :

yes

Transistor Element Material :

SILICON

Turn-Off Delay Time :

315 ns

FET Type :

N-Channel

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

14560pF @ 25V

Drain-source On Resistance-Max :

0.36ohm

Fall Time (Typ) :

90 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

360m Ω @ 25A, 10V

Packaging :

Bulk

Number of Terminations :

12

Vgs (Max) :

±30V

Package / Case :

SP1

Drain to Source Voltage (Vdss) :

1200V

Number of Elements :

1

Published :

2012

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Power Dissipation-Max :

657W Tc