APTM120DA30CT1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount, Screw, Through Hole

Continuous Drain Current (ID) :

31A

Rds On (Max) @ Id, Vgs :

360m Ω @ 25A, 10V

Drain to Source Voltage (Vdss) :

1200V

Pin Count :

12

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Factory Lead Time :

22 Weeks

Power Dissipation :

657W

Input Capacitance (Ciss) (Max) @ Vds :

14560pF @ 25V

Fall Time (Typ) :

90 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Number of Terminations :

10

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Series :

POWER MOS 8™

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Pins :

1

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Packaging :

Bulk

Drain-source On Resistance-Max :

0.36ohm

Number of Elements :

1

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

100 ns

Published :

1997

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

315 ns

Rise Time :

60ns

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Package / Case :

SP1

Power Dissipation-Max :

657W Tc

Current - Continuous Drain (Id) @ 25°C :

31A Tc