APTM120DA29TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Published :

2016

Power Dissipation-Max :

780W Tc

Number of Elements :

1

Package / Case :

SP4

Drain to Source Voltage (Vdss) :

1200V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

348m Ω @ 17A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 5mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

374nC @ 10V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

34A

Terminal Position :

UPPER

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Mount :

Chassis Mount, Screw

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Number of Terminations :

12

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Packaging :

Bulk

Terminal Form :

UNSPECIFIED

Pin Count :

12

Number of Pins :

4

Power Dissipation :

780W