APTM120DA15G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

20600pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

60A

Power Dissipation :

1.25kW

Transistor Application :

SWITCHING

Mount :

Chassis Mount, Screw

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

1250W Tc

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XUFM-X5

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

1200V

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Finish :

TIN SILVER COPPER

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

Vgs(th) (Max) @ Id :

5V @ 10mA

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

748nC @ 10V

Pin Count :

5

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Package / Case :

SP6

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240A

Number of Pins :

6

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

175m Ω @ 30A, 10V

FET Type :

N-Channel