APTM120DA15G
- Mfr.Part #
- APTM120DA15G
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 60A SP6
- Stock
- 23,044
- In Stock :
- 23,044
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 60A
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 1.25kW
- JESD-30 Code :
- R-XUFM-X5
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Number of Pins :
- 6
- Drain to Source Voltage (Vdss) :
- 1200V
- Package / Case :
- SP6
- Input Capacitance (Ciss) (Max) @ Vds :
- 20600pF @ 25V
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Mount :
- Chassis Mount, Screw
- Power Dissipation-Max :
- 1250W Tc
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 748nC @ 10V
- Vgs (Max) :
- ±30V
- Terminal Finish :
- TIN SILVER COPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Mounting Type :
- Chassis Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Packaging :
- Bulk
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 30A, 10V
- Terminal Form :
- UNSPECIFIED
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 240A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Published :
- 2016
- Pin Count :
- 5
- Datasheets
- APTM120DA15G
N-Channel Bulk 175m Ω @ 30A, 10V ±30V 20600pF @ 25V 748nC @ 10V 1200V SP6
APTM120DA15G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 20600pF @ 25V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APTM120DA15G Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 60A
based on its rated peak drain current 240A.
a 1200V drain to source voltage (Vdss)
APTM120DA15G Applications
There are a lot of Microsemi Corporation
APTM120DA15G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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