APTM10UM01FAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2500W Tc

Power Dissipation :

2.5kW

Pulsed Drain Current-Max (IDM) :

2200A

Current - Continuous Drain (Id) @ 25°C :

860A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Published :

2005

Continuous Drain Current (ID) :

860A

Packaging :

Bulk

Package / Case :

SP6

Turn-Off Delay Time :

600 ns

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

3000 mJ

Vgs(th) (Max) @ Id :

4V @ 12mA

Number of Pins :

6

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

185 ns

ECCN Code :

EAR99

JESD-30 Code :

R-XUFM-X5

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

270ns

Fall Time (Typ) :

175 ns

Input Capacitance (Ciss) (Max) @ Vds :

60000pF @ 25V

Additional Feature :

AVALANCHE RATED

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±30V

Factory Lead Time :

36 Weeks

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

5

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 275A, 10V

Gate Charge (Qg) (Max) @ Vgs :

2100nC @ 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

5

Number of Elements :

1

Mount :

Chassis Mount, Screw