APTM10SKM05TG
- Mfr.Part #
- APTM10SKM05TG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 278A SP4
- Stock
- 42,227
- In Stock :
- 42,227
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 278A
- Turn On Delay Time :
- 80 ns
- Terminal Position :
- UPPER
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 12
- Power Dissipation :
- 780W
- Rise Time :
- 165ns
- Operating Temperature :
- -40°C~150°C TJ
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 700nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Mounting Type :
- Chassis Mount
- Pin Count :
- 12
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Factory Lead Time :
- 36 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 780W Tc
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Fall Time (Typ) :
- 135 ns
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.005ohm
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 125A, 10V
- Mount :
- Chassis Mount, Screw
- Current - Continuous Drain (Id) @ 25°C :
- 278A Tc
- Turn-Off Delay Time :
- 280 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Packaging :
- Bulk
- Package / Case :
- SP4
- Input Capacitance (Ciss) (Max) @ Vds :
- 20000pF @ 25V
- Published :
- 2012
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Terminal Form :
- UNSPECIFIED
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- APTM10SKM05TG
N-Channel Bulk 5m Ω @ 125A, 10V ±30V 20000pF @ 25V 700nC @ 10V 100V SP4
APTM10SKM05TG Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 20000pF @ 25V.This device conducts a continuous drain current (ID) of 278A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 280 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 80 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APTM10SKM05TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 278A
the turn-off delay time is 280 ns
a 100V drain to source voltage (Vdss)
APTM10SKM05TG Applications
There are a lot of Microsemi Corporation
APTM10SKM05TG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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