APTM10DAM05TG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Packaging :

Bulk

Pbfree Code :

yes

Power Dissipation-Max :

780W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER

Turn On Delay Time :

80 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

TIN SILVER COPPER

Terminal Form :

UNSPECIFIED

Number of Terminations :

12

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Pin Count :

12

Factory Lead Time :

36 Weeks

Number of Pins :

4

Package / Case :

SP4

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

278A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

Rise Time :

165ns

Current - Continuous Drain (Id) @ 25°C :

278A Tc

Avalanche Energy Rating (Eas) :

3000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Power Dissipation :

780W

Mounting Type :

Chassis Mount

JESD-609 Code :

e1

Case Connection :

Isolated

Turn-Off Delay Time :

280 ns

Fall Time (Typ) :

135 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 5mA

Drain-source On Resistance-Max :

0.005ohm

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED