APTM10DAM05TG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.005ohm

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

135 ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Power Dissipation :

780W

Additional Feature :

AVALANCHE RATED

Packaging :

Bulk

Power Dissipation-Max :

780W Tc

Number of Pins :

4

Terminal Position :

UPPER

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 5mA

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Package / Case :

SP4

Current - Continuous Drain (Id) @ 25°C :

278A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

80 ns

Pin Count :

12

Number of Terminations :

12

Mount :

Chassis Mount, Screw

Turn-Off Delay Time :

280 ns

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Continuous Drain Current (ID) :

278A

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Terminal Finish :

TIN SILVER COPPER

Rise Time :

165ns

JESD-609 Code :

e1

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

3000 mJ