APTM100UM65SCAVG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

5V @ 20mA

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

UPPER

Package / Case :

Module

Continuous Drain Current (ID) :

145A

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1000V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Mounting Type :

Chassis Mount

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

140 ns

Number of Elements :

1

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Pin Count :

5

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

28500pF @ 25V

Rds On (Max) @ Id, Vgs :

78m Ω @ 72.5A, 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

N-Channel

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

Rise Time :

14ns

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.078Ohm

Power Dissipation-Max :

3250W Tc

Turn On Delay Time :

18 ns

Mount :

Chassis Mount, Screw

Fall Time (Typ) :

55 ns

Gate Charge (Qg) (Max) @ Vgs :

1068nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

3200 mJ

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

145A Tc

Number of Pins :

5

Series :

POWER MOS 7®

ECCN Code :

EAR99