APTM100UM65SAG
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- Mfr.Part #
- APTM100UM65SAG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 145A SP6
- Stock
- 34,463
- In Stock ：
- 34,463
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 145A
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 72.5A, 10V
- Terminal Form :
- UNSPECIFIED
- JESD-609 Code :
- e1
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Chassis Mount, Screw
- Current - Continuous Drain (Id) @ 25°C :
- 145A Tc
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 55 ns
- Pulsed Drain Current-Max (IDM) :
- 580A
- Power Dissipation-Max :
- 3250W Tc
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- TIN SILVER COPPER
- Rise Time :
- 14ns
- Mounting Type :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 1068nC @ 10V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 1000V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -40°C~150°C TJ
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 18 ns
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- Drain-source On Resistance-Max :
- 0.078Ohm
- Number of Elements :
- 1
- Terminal Position :
- UPPER
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 28500pF @ 25V
- Packaging :
- Bulk
- Package / Case :
- SP6
- JESD-30 Code :
- R-PUFM-X2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 20mA
- Turn-Off Delay Time :
- 140 ns
- Published :
- 1999
- Datasheets
- APTM100UM65SAG
N-Channel Bulk 78m Ω @ 72.5A, 10V ±30V 28500pF @ 25V 1068nC @ 10V 1000V SP6
APTM100UM65SAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.A device's maximum input capacitance is 28500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 145A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 580A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM100UM65SAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 145A
the turn-off delay time is 140 ns
based on its rated peak drain current 580A.
a 1000V drain to source voltage (Vdss)
APTM100UM65SAG Applications
There are a lot of Microsemi Corporation
APTM100UM65SAG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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