APTM100UM65SAG
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- Mfr.Part #
- APTM100UM65SAG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 145A SP6
- Stock
- 34,463
- In Stock ：
- 34,463
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- UPPER
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 1068nC @ 10V
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 140 ns
- Packaging :
- Bulk
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PUFM-X2
- Current - Continuous Drain (Id) @ 25°C :
- 145A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 6
- Power Dissipation-Max :
- 3250W Tc
- Turn On Delay Time :
- 18 ns
- Drain to Source Voltage (Vdss) :
- 1000V
- Mount :
- Chassis Mount, Screw
- JESD-609 Code :
- e1
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 145A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Package / Case :
- SP6
- Fall Time (Typ) :
- 55 ns
- Operating Temperature :
- -40°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 72.5A, 10V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- TIN SILVER COPPER
- Pbfree Code :
- yes
- Mounting Type :
- Chassis Mount
- Lead Free :
- Lead Free
- Published :
- 1999
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.078Ohm
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 28500pF @ 25V
- Rise Time :
- 14ns
- Vgs(th) (Max) @ Id :
- 5V @ 20mA
- Factory Lead Time :
- 16 Weeks
- Pulsed Drain Current-Max (IDM) :
- 580A
- Datasheets
- APTM100UM65SAG
N-Channel Bulk 78m Ω @ 72.5A, 10V ±30V 28500pF @ 25V 1068nC @ 10V 1000V SP6
APTM100UM65SAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.A device's maximum input capacitance is 28500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 145A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 580A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM100UM65SAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 145A
the turn-off delay time is 140 ns
based on its rated peak drain current 580A.
a 1000V drain to source voltage (Vdss)
APTM100UM65SAG Applications
There are a lot of Microsemi Corporation
APTM100UM65SAG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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