APTM100UM65DAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

36 Weeks

Turn-Off Delay Time :

140 ns

Packaging :

Bulk

Vgs (Max) :

±30V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

145A Tc

JESD-30 Code :

R-PUFM-X2

Package / Case :

SP6

Pulsed Drain Current-Max (IDM) :

580A

Number of Elements :

1

Number of Pins :

6

Transistor Element Material :

SILICON

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

1000V

Drain-source On Resistance-Max :

0.078Ohm

Continuous Drain Current (ID) :

145A

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

28500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

1068nC @ 10V

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

3200 mJ

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Turn On Delay Time :

18 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Rise Time :

14ns

Rds On (Max) @ Id, Vgs :

78m Ω @ 72.5A, 10V

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount, Screw

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 20mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3250W Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

55 ns

Terminal Position :

UPPER

FET Type :

N-Channel

Pin Count :

2

Terminal Form :

UNSPECIFIED

Published :

1999

Additional Feature :

AVALANCHE RATED