APTM100UM60FAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

JESD-609 Code :

e1

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2272W Tc

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Rise Time :

12ns

Avalanche Energy Rating (Eas) :

3000 mJ

Fall Time (Typ) :

40 ns

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

18 ns

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Current - Continuous Drain (Id) @ 25°C :

129A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs (Max) :

±30V

JESD-30 Code :

R-PUFM-X2

Packaging :

Bulk

Turn-Off Delay Time :

155 ns

Drain to Source Voltage (Vdss) :

1000V

Package / Case :

SP6

Drain-source On Resistance-Max :

0.07Ohm

Rds On (Max) @ Id, Vgs :

70m Ω @ 64.5A, 10V

Pin Count :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1116nC @ 10V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 15mA

Operating Temperature :

-40°C~150°C TJ

Pbfree Code :

yes

Mount :

Chassis Mount, Screw

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

31100pF @ 25V

Continuous Drain Current (ID) :

129A

Terminal Finish :

TIN SILVER COPPER