APTM100UM45FAG
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- Mfr.Part #
- APTM100UM45FAG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 215A SP6
- Stock
- 43,506
- In Stock ：
- 43,506
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 5000W Tc
- Length :
- 108mm
- Number of Channels :
- 1
- Mount :
- Chassis Mount, Screw
- Number of Terminations :
- 2
- Terminal Position :
- UPPER
- Terminal Finish :
- TIN SILVER COPPER
- Width :
- 62mm
- Power Dissipation :
- 5kW
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- Packaging :
- Bulk
- Terminal Form :
- UNSPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 6
- Rise Time :
- 14ns
- Factory Lead Time :
- 36 Weeks
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 215A Tc
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 18 ns
- Height :
- 15mm
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 107.5A, 10V
- Turn-Off Delay Time :
- 140 ns
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PUFM-X2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 55 ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 42700pF @ 25V
- Resistance :
- 52mOhm
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 1602nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 30mA
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- SP6
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 215A
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 2
- Datasheets
- APTM100UM45FAG
N-Channel Bulk 52m Ω @ 107.5A, 10V ±30V 42700pF @ 25V 1602nC @ 10V 1000V SP6
APTM100UM45FAG Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 42700pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 215A amps.It is [140 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APTM100UM45FAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 215A
the turn-off delay time is 140 ns
a 1000V drain to source voltage (Vdss)
APTM100UM45FAG Applications
There are a lot of Microsemi Corporation
APTM100UM45FAG applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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