APTM100UM45DAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

52m Ω @ 107.5A, 10V

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

5000W Tc

Terminal Form :

UNSPECIFIED

Series :

POWER MOS 7®

Input Capacitance (Ciss) (Max) @ Vds :

42700pF @ 25V

Power Dissipation :

5kW

Vgs(th) (Max) @ Id :

5V @ 30mA

Continuous Drain Current (ID) :

215A

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP6

Pin Count :

5

Vgs (Max) :

±30V

ECCN Code :

EAR99

Rise Time :

14ns

Avalanche Energy Rating (Eas) :

3200 mJ

Mount :

Chassis Mount, Screw

Current - Continuous Drain (Id) @ 25°C :

215A Tc

Turn-Off Delay Time :

140 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1602nC @ 10V

JESD-30 Code :

R-XUFM-X5

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

UPPER

Drain-source On Resistance-Max :

0.052Ohm

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

6

Number of Elements :

1

Fall Time (Typ) :

55 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

1000V

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Turn On Delay Time :

18 ns

Terminal Finish :

TIN SILVER COPPER