APTM100U13SG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Mount :

Chassis Mount

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

260A

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Gate Charge (Qg) (Max) @ Vgs :

2000nC @ 10V

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Published :

2005

Terminal Form :

UNSPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

31600pF @ 25V

Continuous Drain Current (ID) :

65A

Avalanche Energy Rating (Eas) :

2500 mJ

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

145m Ω @ 32.5A, 10V

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Terminal Finish :

TIN SILVER COPPER

Package / Case :

J3 Module

Drain-source On Resistance-Max :

0.145Ohm

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

1000V

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1250W Tc

Terminal Position :

UPPER

Pin Count :

4

JESD-30 Code :

R-XUFM-X4

JESD-609 Code :

e1

Pbfree Code :

yes