APTM100SKM90G

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Mfr.Part #
APTM100SKM90G
Manufacturer
Microsemi
Package / Case
SP6
Datasheet
Download
Description
MOSFET N-CH 1000V 78A SP6
Stock
12,994
In Stock :
12,994

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
3000 mJ
Factory Lead Time :
22 Weeks
Mounting Type :
Chassis Mount
Transistor Element Material :
SILICON
Terminal Form :
UNSPECIFIED
Terminal Finish :
TIN SILVER COPPER
JESD-609 Code :
e1
JESD-30 Code :
R-XUFM-X5
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
78A
Input Capacitance (Ciss) (Max) @ Vds :
20700pF @ 25V
Published :
2012
Current - Continuous Drain (Id) @ 25°C :
78A Tc
RoHS Status :
RoHS Compliant
Mount :
Chassis Mount, Screw
Pbfree Code :
yes
Operating Temperature :
-40°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
5
Fall Time (Typ) :
40 ns
Rds On (Max) @ Id, Vgs :
105m Ω @ 39A, 10V
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
30V
Number of Pins :
6
Turn On Delay Time :
18 ns
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
SP6
Transistor Application :
SWITCHING
Terminal Position :
UPPER
Number of Terminations :
5
Power Dissipation-Max :
1250W Tc
Packaging :
Bulk
Power Dissipation :
1.25kW
Number of Elements :
1
Rise Time :
12ns
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
744nC @ 10V
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
1000V
Case Connection :
Isolated
Vgs(th) (Max) @ Id :
5V @ 10mA
Turn-Off Delay Time :
155 ns
Datasheets
APTM100SKM90G
Introducing Transistors - FETs, MOSFETs - Single Microsemi APTM100SKM90G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, Number of Pins:6, Package / Case:SP6, Number of Terminations:5, APTM100SKM90G pinout, APTM100SKM90G datasheet PDF, APTM100SKM90G amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi APTM100SKM90G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 105m Ω @ 39A, 10V ±30V 20700pF @ 25V 744nC @ 10V 1000V SP6

APTM100SKM90G Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 20700pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 78A amps.It is [155 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

APTM100SKM90G Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 78A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)


APTM100SKM90G Applications


There are a lot of Microsemi Corporation
APTM100SKM90G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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