APTM100SKM90G
- Mfr.Part #
- APTM100SKM90G
- Manufacturer
- Microsemi
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 78A SP6
- Stock
- 12,994
- In Stock :
- 12,994
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Factory Lead Time :
- 22 Weeks
- Mounting Type :
- Chassis Mount
- Transistor Element Material :
- SILICON
- Terminal Form :
- UNSPECIFIED
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-XUFM-X5
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 78A
- Input Capacitance (Ciss) (Max) @ Vds :
- 20700pF @ 25V
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 78A Tc
- RoHS Status :
- RoHS Compliant
- Mount :
- Chassis Mount, Screw
- Pbfree Code :
- yes
- Operating Temperature :
- -40°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 5
- Fall Time (Typ) :
- 40 ns
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 39A, 10V
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 6
- Turn On Delay Time :
- 18 ns
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SP6
- Transistor Application :
- SWITCHING
- Terminal Position :
- UPPER
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 1250W Tc
- Packaging :
- Bulk
- Power Dissipation :
- 1.25kW
- Number of Elements :
- 1
- Rise Time :
- 12ns
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 744nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 1000V
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Turn-Off Delay Time :
- 155 ns
- Datasheets
- APTM100SKM90G
N-Channel Bulk 105m Ω @ 39A, 10V ±30V 20700pF @ 25V 744nC @ 10V 1000V SP6
APTM100SKM90G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 20700pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 78A amps.It is [155 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APTM100SKM90G Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 78A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)
APTM100SKM90G Applications
There are a lot of Microsemi Corporation
APTM100SKM90G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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