APTM100SK18TG
- Mfr.Part #
- APTM100SK18TG
- Manufacturer
- Microsemi
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 43A SP4
- Stock
- 17,623
- In Stock :
- 17,623
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Pin Count :
- 12
- Turn On Delay Time :
- 18 ns
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 372nC @ 10V
- Power Dissipation :
- 780W
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 12
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Factory Lead Time :
- 22 Weeks
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Fall Time (Typ) :
- 40 ns
- Mounting Type :
- Chassis Mount
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Continuous Drain Current (ID) :
- 43A
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 21.5A, 10V
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Package / Case :
- SP4
- Mount :
- Chassis Mount, Screw
- Radiation Hardening :
- No
- Packaging :
- Bulk
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Published :
- 2012
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 155 ns
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Rise Time :
- 12ns
- Power Dissipation-Max :
- 780W Tc
- Datasheets
- APTM100SK18TG
N-Channel Bulk 210m Ω @ 21.5A, 10V ±30V 10400pF @ 25V 372nC @ 10V 1000V SP4
APTM100SK18TG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 10400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM100SK18TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)
APTM100SK18TG Applications
There are a lot of Microsemi Corporation
APTM100SK18TG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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