APTM100SK18TG

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Mfr.Part #
APTM100SK18TG
Manufacturer
Microsemi
Package / Case
SP4
Datasheet
Download
Description
MOSFET N-CH 1000V 43A SP4
Stock
17,623
In Stock :
17,623

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Pin Count :
12
Turn On Delay Time :
18 ns
Vgs(th) (Max) @ Id :
5V @ 5mA
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
372nC @ 10V
Power Dissipation :
780W
Transistor Application :
SWITCHING
Number of Terminations :
12
Configuration :
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Factory Lead Time :
22 Weeks
Number of Elements :
1
Transistor Element Material :
SILICON
Number of Pins :
4
Fall Time (Typ) :
40 ns
Mounting Type :
Chassis Mount
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
43A Tc
Continuous Drain Current (ID) :
43A
Additional Feature :
AVALANCHE RATED
Case Connection :
Isolated
Rds On (Max) @ Id, Vgs :
210m Ω @ 21.5A, 10V
Terminal Finish :
TIN SILVER COPPER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-40°C~150°C TJ
Package / Case :
SP4
Mount :
Chassis Mount, Screw
Radiation Hardening :
No
Packaging :
Bulk
JESD-609 Code :
e1
Avalanche Energy Rating (Eas) :
3000 mJ
Published :
2012
RoHS Status :
RoHS Compliant
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
1000V
Input Capacitance (Ciss) (Max) @ Vds :
10400pF @ 25V
Vgs (Max) :
±30V
Turn-Off Delay Time :
155 ns
Terminal Position :
UPPER
Terminal Form :
UNSPECIFIED
Rise Time :
12ns
Power Dissipation-Max :
780W Tc
Datasheets
APTM100SK18TG
Introducing Transistors - FETs, MOSFETs - Single Microsemi APTM100SK18TG from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:12, Number of Pins:4, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, Package / Case:SP4, APTM100SK18TG pinout, APTM100SK18TG datasheet PDF, APTM100SK18TG amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi APTM100SK18TG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 210m Ω @ 21.5A, 10V ±30V 10400pF @ 25V 372nC @ 10V 1000V SP4

APTM100SK18TG Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 10400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

APTM100SK18TG Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)


APTM100SK18TG Applications


There are a lot of Microsemi Corporation
APTM100SK18TG applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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