APTM100DAM90G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

5

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 10mA

Drain to Source Voltage (Vdss) :

1000V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

155 ns

Gate Charge (Qg) (Max) @ Vgs :

744nC @ 10V

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

Packaging :

Bulk

Pbfree Code :

yes

Power Dissipation-Max :

1250W Tc

Fall Time (Typ) :

40 ns

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Number of Elements :

1

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

SP6

Transistor Application :

SWITCHING

JESD-30 Code :

R-XUFM-X5

Rds On (Max) @ Id, Vgs :

105m Ω @ 39A, 10V

Case Connection :

Isolated

Pin Count :

5

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

20700pF @ 25V

Power Dissipation :

1.25kW

Current - Continuous Drain (Id) @ 25°C :

78A Tc

Factory Lead Time :

36 Weeks

Published :

2012

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Rise Time :

12ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

78A

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1