APTM100DA33T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

7868pF @ 25V

Vgs (Max) :

±30V

Case Connection :

Isolated

Transistor Element Material :

SILICON

Turn-Off Delay Time :

150 ns

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SP1

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

396m Ω @ 18A, 10V

Power Dissipation :

390W

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Number of Elements :

1

Factory Lead Time :

36 Weeks

Number of Terminations :

12

Drain to Source Voltage (Vdss) :

1000V

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

44 ns

Number of Pins :

1

ECCN Code :

EAR99

Published :

2012

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

23A

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

Pin Count :

12

Drain-source On Resistance-Max :

0.39Ohm

Fall Time (Typ) :

38 ns

Mount :

Chassis Mount, Screw

Power Dissipation-Max :

390W Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Rise Time :

40ns

Mounting Type :

Chassis Mount

Radiation Hardening :

No