APTM100DA33T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Factory Lead Time :

36 Weeks

Vgs (Max) :

±30V

Radiation Hardening :

No

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Turn-Off Delay Time :

150 ns

Rise Time :

40ns

Continuous Drain Current (ID) :

23A

Power Dissipation :

390W

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Published :

2012

Number of Terminations :

12

Drain-source On Resistance-Max :

0.39Ohm

Fall Time (Typ) :

38 ns

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

1000V

Pin Count :

12

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Turn On Delay Time :

44 ns

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Mounting Type :

Chassis Mount

Package / Case :

SP1

Number of Elements :

1

Terminal Position :

UPPER

Input Capacitance (Ciss) (Max) @ Vds :

7868pF @ 25V

Pbfree Code :

yes

Power Dissipation-Max :

390W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

1

Rds On (Max) @ Id, Vgs :

396m Ω @ 18A, 10V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Mount :

Chassis Mount, Screw