APTC60HM70SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

259nC @ 10V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

84 ns

Rds On (Max) @ Id, Vgs :

70m Ω @ 39A, 10V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Turn On Delay Time :

21 ns

Pulsed Drain Current-Max (IDM) :

156A

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

39A

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Packaging :

Bulk

Series :

CoolMOS™

Turn-Off Delay Time :

283 ns

Pbfree Code :

yes

Published :

1997

Avalanche Energy Rating (Eas) :

1800 mJ

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Package / Case :

SP4

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

4

Terminal Form :

UNSPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.07Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Number of Terminations :

14

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount, Screw

Gate to Source Voltage (Vgs) :

20V

Case Connection :

Isolated

JESD-609 Code :

e1

Number of Pins :

4

Max Power Dissipation :

250W

FET Feature :

Standard

Pin Count :

14

Rise Time :

30ns

Power Dissipation :

250W

FET Type :

4 N-Channel (H-Bridge)

DS Breakdown Voltage-Min :

600V