APT50GF120JRDQ3
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- Mfr.Part #
- APT50GF120JRDQ3
- Manufacturer
- Microchip Technology
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- IGBT MOD 1200V 120A 521W ISOTOP
- Stock
- 6,534
- In Stock ：
- 6,534
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Modules
- Terminal Form :
- UNSPECIFIED
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Number of Pins :
- 4
- NTC Thermistor :
- No
- Input Capacitance (Cies) @ Vce :
- 5.32nF @ 25V
- Vce(on) (Max) @ Vge, Ic :
- 3V @ 15V, 75A
- Collector Emitter Saturation Voltage :
- 2.5V
- Current - Collector Cutoff (Max) :
- 750µA
- Package / Case :
- ISOTOP
- Turn On Time :
- 106 ns
- Turn Off Time-Nom (toff) :
- 520 ns
- Factory Lead Time :
- 29 Weeks
- Input :
- Standard
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Position :
- UPPER
- Published :
- 1999
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 5.32nF
- Pbfree Code :
- yes
- Width :
- 25.4mm
- Weight :
- 30.000004g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- POWER CONTROL
- Max Collector Current :
- 120A
- IGBT Type :
- NPT
- Mounting Type :
- Chassis Mount
- Mount :
- Chassis Mount, Screw
- Case Connection :
- Isolated
- Power - Max :
- 521W
- Number of Terminations :
- 4
- Voltage - Rated DC :
- 1.2kV
- Polarity/Channel Type :
- N-Channel
- Current Rating :
- 75A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Pin Count :
- 4
- Max Power Dissipation :
- 521W
- Height :
- 9.6mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Length :
- 38.2mm
- Configuration :
- Single
- Datasheets
- APT50GF120JRDQ3
APT50GF120JRDQ3 datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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