FZ800R12KE3HOSA1
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- Mfr.Part #
- FZ800R12KE3HOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 800A 3550W
- Stock
- 35
- In Stock ：
- 35
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Transistor Application :
- POWER CONTROL
- Polarity/Channel Type :
- N-Channel
- Height :
- 36.5mm
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 5mA
- Operating Temperature :
- -40°C~125°C TJ
- Package / Case :
- Module
- Pbfree Code :
- yes
- NTC Thermistor :
- No
- Input :
- Standard
- Pin Count :
- 5
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Turn Off Time-Nom (toff) :
- 1000 ns
- Width :
- 61.4mm
- Case Connection :
- Isolated
- Configuration :
- Single
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Length :
- 106.4mm
- Max Collector Current :
- 800A
- Input Capacitance (Cies) @ Vce :
- 56nF @ 25V
- Power - Max :
- 3550W
- Terminal Position :
- UPPER
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Turn On Time :
- 440 ns
- Published :
- 2002
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 800A
- Mounting Type :
- Chassis Mount
- Factory Lead Time :
- 14 Weeks
- IGBT Type :
- Trench Field Stop
- Transistor Element Material :
- SILICON
- Mount :
- Screw
- Datasheets
- FZ800R12KE3HOSA1
FZ800R12KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FZ800R12KE3HOSA1 Description
Trench/FeWstopp IGBT3 and Emitter Controlled 3 Diode in a 62mm C-Series Modul
FZ800R12KE3HOSA1 Features
?4 kV AC Insulation for 1 minute
?Package with CTI > 400
?Low Clearance Distances and High Creepage
?Low Power Density
?Base Plate Isolated
?Normal Housing
FZ800R12KE3HOSA1 Applications
-
Higher Power Converters
-
Drives, motor
-
System UPS
-
Wind Generators
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